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GaN HEMT structure with a gate field plate. The source to gate length L... | Download Scientific Diagram
Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors - RSC Advances (RSC Publishing)
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Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors: Journal of Vacuum Science & Technology B: Vol 29, No 3
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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors<xref ref-type="fn" rid="cpb141494fn1">*</xref>
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Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage - ScienceDirect
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Field-plated AlGaN/GaN HEMTs: (a) integrated field plate; (b) separated... | Download Scientific Diagram
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Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates
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Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications - ScienceDirect
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100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
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